Технічний опис MSCDC100A70D1PAG MICROCHIP TECHNOLOGY
Description: DIODE MODULE SIC 700V 100A D1P, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: D1P, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Current - Reverse Leakage @ Vr: 400 µA @ 700 V.
Інші пропозиції MSCDC100A70D1PAG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MSCDC100A70D1PAG | Виробник : Microchip Technology |
 Description: DIODE MODULE SIC 700V 100A D1PPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: D1P Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A Current - Reverse Leakage @ Vr: 400 µA @ 700 V |
товару немає в наявності |
|
 |
MSCDC100A70D1PAG | Виробник : Microchip Technology |
Diode Modules PM-DIODE-SIC-SBD-D1P |
товару немає в наявності |