MSCDC100KK170D1PAG Microchip Technology
Виробник: Microchip Technology
Description: DIODE MOD SIC SCHOT 1700V D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1700 V
Description: DIODE MOD SIC SCHOT 1700V D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1700 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 17957.66 грн |
Відгуки про товар
Написати відгук
Технічний опис MSCDC100KK170D1PAG Microchip Technology
Description: DIODE MOD SIC SCHOT 1700V D1P, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: D1P, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Current - Reverse Leakage @ Vr: 400 µA @ 1700 V.
Інші пропозиції MSCDC100KK170D1PAG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
MSCDC100KK170D1PAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double,common cathode; 1.7kV; 100A; D1P; screw; SiC Technology: SiC Case: D1P Semiconductor structure: common cathode; double Max. off-state voltage: 1.7kV Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw Load current: 100A Type of module: diode кількість в упаковці: 1 шт |
товар відсутній |
||
MSCDC100KK170D1PAG | Виробник : Microchip Technology | Discrete Semiconductor Modules PM-DIODE-SIC-SBD-D1P |
товар відсутній |
||
MSCDC100KK170D1PAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Diode modules Description: Module: diode; double,common cathode; 1.7kV; 100A; D1P; screw; SiC Technology: SiC Case: D1P Semiconductor structure: common cathode; double Max. off-state voltage: 1.7kV Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw Load current: 100A Type of module: diode |
товар відсутній |