MSCSM120AM027CT6AG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW
Case: SP6C
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 1400A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 584A
On-state resistance: 3.5mΩ
Power dissipation: 2.97kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
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Технічний опис MSCSM120AM027CT6AG MICROCHIP (MICROSEMI)
Description: SIC 2N-CH 1200V 733A SP6C, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.97kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 733A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 9mA, Supplier Device Package: SP6C.
Інші пропозиції MSCSM120AM027CT6AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MSCSM120AM027CT6AG | Виробник : Microchip Technology |
Phase Leg Sic Power Module |
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| MSCSM120AM027CT6AG | Виробник : Microchip Technology |
Phase Leg Sic Power Module |
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MSCSM120AM027CT6AG | Виробник : Microchip Technology |
Description: SIC 2N-CH 1200V 733A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: SP6C |
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MSCSM120AM027CT6AG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C |
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| MSCSM120AM027CT6AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; SP6C; Idm: 1400A; 2.97kW Case: SP6C Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |