Технічний опис MSCSM120AM02CT6LIAG Microchip Technology
Description: MOSFET 2N-CH 1200V 947A SP6C LI, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 3.75kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 947A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 12mA, Supplier Device Package: SP6C LI, Part Status: Active.
Інші пропозиції MSCSM120AM02CT6LIAG за ціною від 115264.84 грн до 115264.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
 |
MSCSM120AM02CT6LIAG | Microchip Technology |
 Description: MOSFET 2N-CH 1200V 947A SP6C LIPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Supplier Device Package: SP6C LI Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
| MSCSM120AM02CT6LIAG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 115264.84 грн |