MSCSM120AM042CT6AG Microchip Technology
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 61272.95 грн |
| 100+ | 44866.67 грн |
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Технічний опис MSCSM120AM042CT6AG Microchip Technology
Description: SIC 2N-CH 1200V 495A SP6C, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.031kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA, Supplier Device Package: SP6C, Part Status: Active.
Інші пропозиції MSCSM120AM042CT6AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MSCSM120AM042CT6AG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W Case: SP6C Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 990A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM042CT6AG | Виробник : Microchip Technology |
UNRLS CC6290 |
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MSCSM120AM042CT6AG | Виробник : Microchip Technology |
Description: SIC 2N-CH 1200V 495A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: SP6C Part Status: Active |
товар відсутній |
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| MSCSM120AM042CT6AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; SP6C; Idm: 990A; 2031W Case: SP6C Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 990A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |