Технічний опис MSCSM120AM16CT1AG Microchip Technology
Description: SIC 2N-CH 1200V 173A SP1F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 745W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Supplier Device Package: SP1F.
Інші пропозиції MSCSM120AM16CT1AG
| Фото | Назва | Виробник | Інформація |
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Ціна |
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MSCSM120AM16CT1AG | Виробник : Microchip Technology |
Description: SIC 2N-CH 1200V 173A SP1FPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP1F |
товару немає в наявності |
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MSCSM120AM16CT1AG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F |
товару немає в наявності |


