Технічний опис MSCSM120AM50CT1AG Microchip Technology
Description: SIC 2N-CH 1200V 55A SP1F, Packaging: Tube, Part Status: Active, Supplier Device Package: SP1F, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 245W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module.
Інші пропозиції MSCSM120AM50CT1AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MSCSM120AM50CT1AG | Microchip Technology |
 Description: SIC 2N-CH 1200V 55A SP1FPackaging: Tube Part Status: Active Supplier Device Package: SP1F Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 245W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module |
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В кошику од. на суму грн. |
| MSCSM120AM50CT1AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 55A SP1F
Packaging: Tube
Part Status: Active
Supplier Device Package: SP1F
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 245W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Description: SIC 2N-CH 1200V 55A SP1F
Packaging: Tube
Part Status: Active
Supplier Device Package: SP1F
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 245W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
товару немає в наявності
В кошику
од. на суму грн.