Технічний опис MSCSM120DDUM16TBL3NG Microchip Technology
Description: SIC 4N-CH 1200V 150A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Common Source, Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 560W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 150A, Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA.
Інші пропозиції MSCSM120DDUM16TBL3NG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MSCSM120DDUM16TBL3NG | Виробник : Microchip Technology |
 Description: SIC 4N-CH 1200V 150APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel, Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 560W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA |
товару немає в наявності |
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MSCSM120DDUM16TBL3NG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-SIC-BL3 |
товару немає в наявності |