MSCSM120HM083AG Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET 4N-CH 1200V 251A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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Технічний опис MSCSM120HM083AG Microchip Technology
Description: MOSFET 4N-CH 1200V 251A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.042kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 251A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 9mA, Part Status: Active.
Інші пропозиції MSCSM120HM083AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MSCSM120HM083AG | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-SIC-SP6C |
товару немає в наявності |