MSCSM120HM16CT3AG Microchip Technology

Description: MOSFET 4N-CH 1200V 173A SP3F, Supplier Device Package: SP3F, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 745W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube.