Технічний опис MSCSM120TAM16CTPAG Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6P, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 728W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 171A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Supplier Device Package: SP6-P, Part Status: Active.
Інші пропозиції MSCSM120TAM16CTPAG
| Фото | Назва | Виробник | Інформація |
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| MSCSM120TAM16CTPAG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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MSCSM120TAM16CTPAG | Виробник : Microchip Technology |
Description: PM-MOSFET-SIC-SBD~-SP6P Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 728W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP6-P Part Status: Active |
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MSCSM120TAM16CTPAG | Виробник : Microchip Technology |
Discrete Semiconductor Modules CC6556 |
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| MSCSM120TAM16CTPAG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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