Технічний опис MSCSM120TAM31CT3AG Microchip Technology
Description: SIC 6N-CH 1200V 89A SP3F, Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 395W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 6 N-Channel (3-Phase Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube, Supplier Device Package: SP3F, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V.
Інші пропозиції MSCSM120TAM31CT3AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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MSCSM120TAM31CT3AG | Microchip Technology |
 Description: SIC 6N-CH 1200V 89A SP3FInput Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V |
товару немає в наявності |
В кошику од. на суму грн. |
| MSCSM120TAM31CT3AG |
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Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 89A SP3F
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Description: SIC 6N-CH 1200V 89A SP3F
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
товару немає в наявності
В кошику
од. на суму грн.