MSCSM120TLM50C3AG Microchip Technology

Description: PM-MOSFET-SIC-SBD-SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 245W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: SP3F, Part Status: Active.