MSCSM170HRM11NG Microchip Technology

Description: SIC 4N-CH 1700V/1200V 226A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.012kW (Tc), 662W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA.