MSCSM70TAM19CT3AG Microchip Technology
Виробник: Microchip TechnologyDescription: SIC 6N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23811.26 грн |
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Технічний опис MSCSM70TAM19CT3AG Microchip Technology
Description: SIC 6N-CH 700V 124A SP3F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 365W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V, Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 4mA, Supplier Device Package: SP3F.
Інші пропозиції MSCSM70TAM19CT3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MSCSM70TAM19CT3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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MSCSM70TAM19CT3AG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
товар відсутній |
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| MSCSM70TAM19CT3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
товар відсутній |