MSCSM70VM10C4AG Microchip Technology
Виробник: Microchip TechnologyDescription: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 24724.18 грн |
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Технічний опис MSCSM70VM10C4AG Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP4, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 674W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 238A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 8mA, Supplier Device Package: SP4, Part Status: Active.
Інші пропозиції MSCSM70VM10C4AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MSCSM70VM10C4AG | Виробник : Microchip Technology |
Vienna Rectifier Phase Leg SiC Power |
товару немає в наявності |
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| MSCSM70VM10C4AG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A Case: SP4 Technology: SiC Topology: Vienna Rectifier Pulsed drain current: 476A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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MSCSM70VM10C4AG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP4 |
товару немає в наявності |
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| MSCSM70VM10C4AG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A Case: SP4 Technology: SiC Topology: Vienna Rectifier Pulsed drain current: 476A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor |
товару немає в наявності |