MSCSM70VM10C4AG Microchip Technology

Description: PM-MOSFET-SIC-SBD~-SP4, Part Status: Active, Supplier Device Package: SP4, Vgs(th) (Max) @ Id: 2.4V @ 8mA, Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V, Current - Continuous Drain (Id) @ 25°C: 238A (Tc), Drain to Source Voltage (Vdss): 700V, Power - Max: 674W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Package / Case: Module, Packaging: Tube, Mounting Type: Chassis Mount.