MSE07PDHM3/89A Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GP 200V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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Технічний опис MSE07PDHM3/89A Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 700MA MICROSMP, Packaging: Tape & Reel (TR), Package / Case: MicroSMP, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 780 ns, Technology: Standard, Current - Average Rectified (Io): 700mA, Supplier Device Package: MicroSMP (DO-219AD), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Інші пропозиції MSE07PDHM3/89A
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MSE07PDHM3/89A | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 700MA MICROSMP Packaging: Cut Tape (CT) Package / Case: MicroSMP Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Current - Average Rectified (Io): 700mA Supplier Device Package: MicroSMP (DO-219AD) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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| MSE07PDHM3/89A | Виробник : Vishay Semiconductors |
Rectifiers 0.7A, 200V, ESD PROTECTION, SM RECT |
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