MSMBJ100CAe3 Microchip Technology
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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Технічний опис MSMBJ100CAe3 Microchip Technology
Description: TVS DIODE 100VWM 162VC DO214AA, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 3.7A, Voltage - Reverse Standoff (Typ): 100V, Supplier Device Package: SMBJ (DO-214AA), Bidirectional Channels: 1, Voltage - Breakdown (Min): 111V, Voltage - Clamping (Max) @ Ipp: 162V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Інші пропозиції MSMBJ100CAe3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
MSMBJ100CAe3 | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 111V; 3.7A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| MSMBJ100CAe3 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111V; 3.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 111V; 3.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.