Технічний опис MSMBJ33AE3 Microchip Technology
Description: TVS DIODE 33VWM 53.3VC SMBJ, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 11.3A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: DO-214AA (SMBJ), Unidirectional Channels: 1, Voltage - Breakdown (Min): 36.7V, Voltage - Clamping (Max) @ Ipp: 53.3V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Інші пропозиції MSMBJ33AE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MSMBJ33AE3 | Виробник : MICROSEMI |
 SMBJ/TRANSIENT VOLTAGE SUPPRESSOR MSMBJ33кількість в упаковці: 1 шт |
товару немає в наявності |
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MSMBJ33AE3 | Виробник : Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AA (SMBJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MSMBJ33AE3 | Виробник : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 33V 5% 600W uni |
товару немає в наявності |