MSMBJ8.5CA MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
кількість в упаковці: 1 шт
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Технічний опис MSMBJ8.5CA MICROCHIP (MICROSEMI)
Description: TVS DIODE 8.5VWM 14.4VC SMBJ, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 41.7A, Voltage - Reverse Standoff (Typ): 8.5V, Supplier Device Package: SMBJ (DO-214AA), Bidirectional Channels: 1, Voltage - Breakdown (Min): 9.44V, Voltage - Clamping (Max) @ Ipp: 14.4V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Інші пропозиції MSMBJ8.5CA
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MSMBJ8.5CA | Виробник : Microchip Technology |
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MSMBJ8.5CA | Виробник : Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.7A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MSMBJ8.5CA | Виробник : Microchip Technology |
ESD Suppressors / TVS Diodes TVS 8.5V 5% 600W bi |
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MSMBJ8.5CA | Виробник : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 10µA |
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