MSMLJ40A Microchip Technology
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.22 грн |
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Технічний опис MSMLJ40A Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 46.4A, Voltage - Reverse Standoff (Typ): 40V, Supplier Device Package: DO-214AB, Unidirectional Channels: 1, Voltage - Breakdown (Min): 44.4V, Voltage - Clamping (Max) @ Ipp: 64.5V, Power - Peak Pulse: 3000W (3kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500.
Інші пропозиції MSMLJ40A
| Фото | Назва | Виробник | Інформація |
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MSMLJ40A | Виробник : MICROCHIP (MICROSEMI) |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA кількість в упаковці: 1 шт |
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MSMLJ40A | Виробник : Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 46.4A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| MSMLJ40A | Виробник : Microsemi |
ESD Suppressors / TVS Diodes Uni-Directional TVS |
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MSMLJ40A | Виробник : MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
товар відсутній |