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MSMLJ45Ae3 Microchip Technology
Виробник: Microchip TechnologyDescription: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
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| 2+ | 166.82 грн |
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Технічний опис MSMLJ45Ae3 Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 41.2A, Voltage - Reverse Standoff (Typ): 45V, Supplier Device Package: DO-214AB, Unidirectional Channels: 1, Voltage - Breakdown (Min): 50V, Voltage - Clamping (Max) @ Ipp: 72.7V, Power - Peak Pulse: 3000W (3kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції MSMLJ45Ae3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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MSMLJ45Ae3 | Виробник : Microsemi |
ESD Suppressors / TVS Diodes Uni-Directional TVS |
на замовлення 390 шт: термін постачання 21-30 дні (днів) |
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MSMLJ45Ae3 | Виробник : MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
товар відсутній |
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MSMLJ45Ae3 | Виробник : MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
товар відсутній |