Технічний опис MSRT10080(A)D GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 100A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Інші пропозиції MSRT10080(A)D
| Фото | Назва | Виробник | Інформація |
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MSRT10080AD | Виробник : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 800V 100A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
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MSRT10080(A)D | Виробник : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 800V 100A Forward |
товару немає в наявності |