Технічний опис MSRT200160(A) GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 1600 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Інші пропозиції MSRT200160(A)
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MSRT200160A | GeneSiC Semiconductor |
Description: DIODE MOD GP 1600V 200A 3TOWER Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Voltage - DC Reverse (Vr) (Max): 1600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
 |
MSRT200160(A) | GeneSiC Semiconductor |
 Diode Modules 1600V 200A Std. Recovery |
товару немає в наявності |
В кошику од. на суму грн. |
| MSRT200160A |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Description: DIODE MOD GP 1600V 200A 3TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MSRT200160(A) |
|
Виробник: GeneSiC Semiconductor
Diode Modules 1600V 200A Std. Recovery
Diode Modules 1600V 200A Std. Recovery
товару немає в наявності
В кошику
од. на суму грн.