Технічний опис MSRT20060(A)D GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Інші пропозиції MSRT20060(A)D
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MSRT20060AD | GeneSiC Semiconductor |
Description: DIODE MODULE GP 600V 200A 3TOWER Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
d_SPL.jpg "MSRT20060(A)D") |
MSRT20060(A)D | GeneSiC Semiconductor |
 Discrete Semiconductor Modules 600V 200A Forward |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. |
| MSRT20060AD |
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Description: DIODE MODULE GP 600V 200A 3TOWER
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MSRT20060(A)D |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 600V 200A Forward
Discrete Semiconductor Modules 600V 200A Forward
товару немає в наявності
Мінімальне замовлення: 80 шт
В кошику
од. на суму грн.