MSRT20060D GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: 600V 200A THREE TOWER SILICON RE
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Технічний опис MSRT20060D GeneSiC Semiconductor
Description: 600V 200A THREE TOWER SILICON RE, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції MSRT20060D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MSRT20060D | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 200A Three Tower Silicon Rectifier Module - Standard Recovery (Standard Configuration) |
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