MT29F512G08EBHAFB17A3WC1-R Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC FLASH 512GBIT PARALLEL DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: Die
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512GBIT PARALLEL DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 512Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.6V
Technology: FLASH - NAND (TLC)
Memory Format: FLASH
Supplier Device Package: Die
Memory Interface: Parallel
Memory Organization: 64G x 8
DigiKey Programmable: Not Verified
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Технічний опис MT29F512G08EBHAFB17A3WC1-R Micron Technology Inc.
Description: IC FLASH 512GBIT PARALLEL DIE, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Memory Size: 512Gbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 70°C, Voltage - Supply: 2.5V ~ 3.6V, Technology: FLASH - NAND (TLC), Memory Format: FLASH, Supplier Device Package: Die, Memory Interface: Parallel, Memory Organization: 64G x 8, DigiKey Programmable: Not Verified.
Інші пропозиції MT29F512G08EBHAFB17A3WC1-R
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MT29F512G08EBHAFB17A3WC1-R | Виробник : Micron | NAND Flash TLC 512G Die 64GX8 |
товару немає в наявності |