MT3S111TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Відгуки про товар
Написати відгук
Технічний опис MT3S111TU,LF Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM, Current - Collector (Ic) (Max): 100mA, Power - Max: 800mW, Gain: 12.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: UFM, Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz, Frequency - Transition: 10GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Voltage - Collector Emitter Breakdown (Max): 6V.
Інші пропозиції MT3S111TU,LF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
MT3S111TU,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 6V 10GHZ UFM Part Status: Active Supplier Device Package: UFM Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz Frequency - Transition: 10GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 6V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Gain: 12.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| MT3S111TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.