MT3S111TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
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Технічний опис MT3S111TU,LF Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM, Current - Collector (Ic) (Max): 100mA, Power - Max: 800mW, Gain: 12.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: UFM, Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz, Frequency - Transition: 10GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Voltage - Collector Emitter Breakdown (Max): 6V.
Інші пропозиції MT3S111TU,LF за ціною від 20.79 грн до 49.95 грн
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MT3S111TU,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 6V 10GHZ UFM Part Status: Active Supplier Device Package: UFM Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz Frequency - Transition: 10GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 6V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Gain: 12.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 8649 шт: термін постачання 21-31 дні (днів) |
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| MT3S111TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 8649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.95 грн |
| 10+ | 36.80 грн |
| 25+ | 33.11 грн |
| 100+ | 26.58 грн |
| 250+ | 24.15 грн |
| 500+ | 22.55 грн |
| 1000+ | 20.79 грн |