MT40A1G8WE-083E AUT:B Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 1.2GHZ 78FBGA
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Packaging: Tray
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 1G x 8
Memory Interface: Parallel
Grade: Automotive
Supplier Device Package: 78-FBGA (8x12)
Memory Format: DRAM
Clock Frequency: 1.2 GHz
Technology: SDRAM - DDR4
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Технічний опис MT40A1G8WE-083E AUT:B Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 1.2GHZ 78FBGA, Voltage - Supply: 1.14V ~ 1.26V, Operating Temperature: -40°C ~ 125°C (TC), Memory Type: Volatile, Memory Size: 8Gbit, Mounting Type: Surface Mount, Package / Case: 78-TFBGA, Packaging: Tray, Qualification: AEC-Q100, DigiKey Programmable: Not Verified, Memory Organization: 1G x 8, Memory Interface: Parallel, Grade: Automotive, Supplier Device Package: 78-FBGA (8x12), Memory Format: DRAM, Clock Frequency: 1.2 GHz, Technology: SDRAM - DDR4.
Інші пропозиції MT40A1G8WE-083E AUT:B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MT40A1G8WE-083E AUT:B | Виробник : Micron |
DRAM DDR4 8G 1GX8 FBGA |
товару немає в наявності |