MT45W1MW16BDGB-708AT
Виробник:
на замовлення 1372 шт:
термін постачання 14-28 дні (днів)
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Технічний опис MT45W1MW16BDGB-708AT
Description: IC PSRAM 16MBIT PARALLEL 54VFBGA, Packaging: Tray, Package / Case: 54-VFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.7V ~ 1.95V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 54-VFBGA (6x8), Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 1M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції MT45W1MW16BDGB-708AT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| MT45W1MW16BDGB-708 AT | Micron Technology Inc. |
Description: IC PSRAM 16MBIT PARALLEL 54VFBGA Packaging: Tray Package / Case: 54-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Memory Format: PSRAM Supplier Device Package: 54-VFBGA (6x8) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| MT45W1MW16BDGB-708 AT |
Виробник: Micron Technology Inc.
Description: IC PSRAM 16MBIT PARALLEL 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Supplier Device Package: 54-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC PSRAM 16MBIT PARALLEL 54VFBGA
Packaging: Tray
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Supplier Device Package: 54-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.