MT46V128M4TG-6T:D TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Cut Tape (CT)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
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Технічний опис MT46V128M4TG-6T:D TR Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 66TSOP, DigiKey Programmable: Not Verified, Memory Organization: 128M x 4, Access Time: 700 ps, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 66-TSOP, Memory Format: DRAM, Clock Frequency: 167 MHz, Technology: SDRAM - DDR, Voltage - Supply: 2.3V ~ 2.7V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 66-TSSOP (0.400", 10.16mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції MT46V128M4TG-6T:D TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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MT46V128M4TG-6T:D TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 66TSOP DigiKey Programmable: Not Verified Memory Organization: 128M x 4 Access Time: 700 ps Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Supplier Device Package: 66-TSOP Memory Format: DRAM Clock Frequency: 167 MHz Technology: SDRAM - DDR Voltage - Supply: 2.3V ~ 2.7V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| MT46V128M4TG-6T:D TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 66TSOP
DigiKey Programmable: Not Verified
Memory Organization: 128M x 4
Access Time: 700 ps
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 66-TSOP
Memory Format: DRAM
Clock Frequency: 167 MHz
Technology: SDRAM - DDR
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Description: IC DRAM 512MBIT PAR 66TSOP
DigiKey Programmable: Not Verified
Memory Organization: 128M x 4
Access Time: 700 ps
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 66-TSOP
Memory Format: DRAM
Clock Frequency: 167 MHz
Technology: SDRAM - DDR
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.