MT48H32M16LFCJ-75:A TR Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54VFBGA
Memory Organization: 32M x 16
Access Time: 6 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Part Status: Obsolete
Supplier Device Package: 54-VFBGA (10x11.5)
Memory Format: DRAM
Clock Frequency: 133 MHz
Technology: SDRAM - Mobile LPSDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Packaging: Tape & Reel (TR)
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Технічний опис MT48H32M16LFCJ-75:A TR Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54VFBGA, Memory Organization: 32M x 16, Access Time: 6 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Part Status: Obsolete, Supplier Device Package: 54-VFBGA (10x11.5), Memory Format: DRAM, Clock Frequency: 133 MHz, Technology: SDRAM - Mobile LPSDR, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: 0°C ~ 70°C (TA), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 54-VFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції MT48H32M16LFCJ-75:A TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
MT48H32M16LFCJ-75:A TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 54VFBGA Packaging: Cut Tape (CT) Package / Case: 54-VFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPSDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 54-VFBGA (10x11.5) Part Status: Obsolete Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 6 ns Memory Organization: 32M x 16 |
товару немає в наявності |
В кошику од. на суму грн. |
| MT48H32M16LFCJ-75:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Cut Tape (CT)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (10x11.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Cut Tape (CT)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (10x11.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
товару немає в наявності
В кошику
од. на суму грн.