MT4S300U(TE85L,O,F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: X34 PB-F RADIO-FREQUENCY SIGE HE
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.9dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
Frequency - Transition: 26.5GHz
Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
Supplier Device Package: USQ
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Технічний опис MT4S300U(TE85L,O,F Toshiba Semiconductor and Storage
Description: X34 PB-F RADIO-FREQUENCY SIGE HE, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 16.9dB, Power - Max: 250mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 4V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V, Frequency - Transition: 26.5GHz, Noise Figure (dB Typ @ f): 0.55dB @ 2GHz, Supplier Device Package: USQ.
Інші пропозиції MT4S300U(TE85L,O,F
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MT4S300U(TE85L,O,F | Виробник : Toshiba Semiconductor and Storage |
Description: X34 PB-F RADIO-FREQUENCY SIGE HE Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16.9dB Power - Max: 250mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 4V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V Frequency - Transition: 26.5GHz Noise Figure (dB Typ @ f): 0.55dB @ 2GHz Supplier Device Package: USQ |
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