MT53B128M32D1DT-053 IT:A Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT 1.866GHZ 200WFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Description: IC DRAM 4GBIT 1.866GHZ 200WFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
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Технічний опис MT53B128M32D1DT-053 IT:A Micron Technology Inc.
Description: IC DRAM 4GBIT 1.866GHZ 200WFBGA, Packaging: Tray, Package / Case: 200-VFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 95°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4, Clock Frequency: 1.866 GHz, Memory Format: DRAM, Supplier Device Package: 200-WFBGA (10x14.5), Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 128M x 32.