MT53E128M32D2FW-046 AAT:A TR Micron Technology Inc.
Виробник: Micron Technology Inc.Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
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Технічний опис MT53E128M32D2FW-046 AAT:A TR Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Grade: Automotive, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 128M x 32, Qualification: AEC-Q100.
Інші пропозиції MT53E128M32D2FW-046 AAT:A TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MT53E128M32D2FW-046 AAT:A TR | Виробник : Micron |
DRAM LPDDR4 4G 128MX32 FBGA DDP |
товару немає в наявності |