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Технічний опис MT53E128M32D2FW-046 AAT:A Micron
Description: IC DRAM 4GBIT PAR 200TFBGA, Qualification: AEC-Q100, Access Time: 3.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 18ns, Grade: Automotive, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 2.133 GHz, Technology: SDRAM - Mobile LPDDR4, Voltage - Supply: 1.06V ~ 1.17V, Operating Temperature: -40°C ~ 105°C (TC), Memory Type: Volatile, Memory Size: 4Gbit, Mounting Type: Surface Mount, Package / Case: 200-TFBGA, Packaging: Box, DigiKey Programmable: Not Verified, Memory Organization: 128M x 32.
Інші пропозиції MT53E128M32D2FW-046 AAT:A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
MT53E128M32D2FW-046 AAT:A | Micron Technology Inc. |
 Description: IC DRAM 4GBIT PAR 200TFBGAQualification: AEC-Q100 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Box DigiKey Programmable: Not Verified Memory Organization: 128M x 32 |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. |
| MT53E128M32D2FW-046 AAT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.