| Кількість | Ціна |
|---|---|
| 1+ | 836.72 грн |
| 10+ | 765.45 грн |
| 25+ | 644.01 грн |
| 50+ | 635.64 грн |
| 100+ | 611.95 грн |
| 250+ | 592.43 грн |
| 500+ | 578.49 грн |
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Технічний опис MT53E128M32D2FW-046 AAT:A Micron
Description: IC DRAM 4GBIT PAR 200TFBGA, Qualification: AEC-Q100, Access Time: 3.5 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 18ns, Grade: Automotive, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 2.133 GHz, Technology: SDRAM - Mobile LPDDR4, Voltage - Supply: 1.06V ~ 1.17V, Operating Temperature: -40°C ~ 105°C (TC), Memory Type: Volatile, Memory Size: 4Gbit, Mounting Type: Surface Mount, Package / Case: 200-TFBGA, Packaging: Box, DigiKey Programmable: Not Verified, Memory Organization: 128M x 32.
Інші пропозиції MT53E128M32D2FW-046 AAT:A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MT53E128M32D2FW-046 AAT:A | Виробник : Micron Technology Inc. |
 Description: IC DRAM 4GBIT PAR 200TFBGAQualification: AEC-Q100 Access Time: 3.5 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 18ns Grade: Automotive Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 2.133 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Memory Type: Volatile Memory Size: 4Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Box DigiKey Programmable: Not Verified Memory Organization: 128M x 32 |
товару немає в наявності |