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Технічний опис MT53E1G32D2FW-046 AAT:C Micron
Description: IC DRAM 32GBIT PAR 200TFBGA, Packaging: Tray, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Grade: Automotive, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 1G x 32, Qualification: AEC-Q100.
Інші пропозиції MT53E1G32D2FW-046 AAT:C
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
MT53E1G32D2FW-046 AAT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. |
| MT53E1G32D2FW-046 AAT:C | MICRON TECHNOLOGY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷105°C; 1.1÷1.17V Type of integrated circuit: DRAM memory Mounting: SMD Supply voltage: 1.1...1.17V Operating temperature: -40...105°C Clock frequency: 2.133GHz Memory: 32Gb DRAM Kind of memory: DRAM; LPDDR4; SDRAM |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. |
| MT53E1G32D2FW-046 AAT:C |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1G x 32
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| MT53E1G32D2FW-046 AAT:C |
Виробник: MICRON TECHNOLOGY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷105°C; 1.1÷1.17V
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.1...1.17V
Operating temperature: -40...105°C
Clock frequency: 2.133GHz
Memory: 32Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32GbDRAM; 2.133GHz; -40÷105°C; 1.1÷1.17V
Type of integrated circuit: DRAM memory
Mounting: SMD
Supply voltage: 1.1...1.17V
Operating temperature: -40...105°C
Clock frequency: 2.133GHz
Memory: 32Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.