| Кількість | Ціна |
|---|---|
| 1+ | 10748.08 грн |
| 10+ | 9599.84 грн |
| 25+ | 8111.42 грн |
| 50+ | 7942.05 грн |
| 100+ | 7939.96 грн |
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Технічний опис MT53E2G32D4DE-046 WT:C Micron
Description: IC DRAM 64GBIT PAR 200TFBGA, Packaging: Box, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Gbit, Memory Type: Volatile, Operating Temperature: -25°C ~ 85°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Part Status: Active, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 2G x 32, DigiKey Programmable: Not Verified.
Інші пропозиції MT53E2G32D4DE-046 WT:C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MT53E2G32D4DE-046 WT:C | Виробник : Micron Technology Inc. |
Description: IC DRAM 64GBIT PAR 200TFBGAPackaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 2G x 32 DigiKey Programmable: Not Verified |
товару немає в наявності |
