MT53E512M32D1ZW-046 AAT:B Micron Technology Inc.
Виробник: Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
| Кількість | Ціна |
|---|---|
| 1+ | 1381.87 грн |
| 10+ | 1232.79 грн |
| 25+ | 1193.92 грн |
| 50+ | 1093.08 грн |
| 100+ | 1065.94 грн |
| 250+ | 1030.64 грн |
| 500+ | 988.01 грн |
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Технічний опис MT53E512M32D1ZW-046 AAT:B Micron Technology Inc.
Description: IC DRAM 16GBIT PAR 200TFBGA, Packaging: Box, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 16Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Grade: Automotive, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 512M x 32, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції MT53E512M32D1ZW-046 AAT:B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MT53E512M32D1ZW-046 AAT:B | Виробник : Micron | DRAM LPDDR4 16Gbit 32 200/264 TFBGA 1 AT |
товару немає в наявності |