Технічний опис MTB50P03HDLT4G ON
Description: MOSFET P-CH 30V 50A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.
Інші пропозиції MTB50P03HDLT4G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MTB50P03HDLT4G | Виробник : ON | 08+ TSSOP16 |
на замовлення 758 шт: термін постачання 14-28 дні (днів) |
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MTB50P03HDLT4G | Виробник : ON Semiconductor | Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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MTB50P03HDLT4G | Виробник : ON Semiconductor | Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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MTB50P03HDLT4G | Виробник : onsemi |
Description: MOSFET P-CH 30V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V |
товар відсутній |
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MTB50P03HDLT4G | Виробник : onsemi |
Description: MOSFET P-CH 30V 50A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V |
товар відсутній |
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MTB50P03HDLT4G | Виробник : onsemi | MOSFET PFET D2PAK 30V 50A 25mOhm |
товар відсутній |