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Технічний опис MTI200WX75GD-SMD IXYS
Description: MOSFET 6N-CH 75V 255A ISOPLUS, Packaging: Tube, Package / Case: ISOPLUS-DIL™, Mounting Type: Surface Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 255A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V, Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V, Vgs(th) (Max) @ Id: 3.8V @ 275µA, Supplier Device Package: ISOPLUS-DIL™.
Інші пропозиції MTI200WX75GD-SMD за ціною від 2630.36 грн до 2630.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| MTI200WX75GD-SMD | IXYS |
 Description: MOSFET 6N-CH 75V 255A ISOPLUSPackaging: Tube Package / Case: ISOPLUS-DIL™ Mounting Type: Surface Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 255A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: ISOPLUS-DIL™ |
на замовлення 819 шт: термін постачання 21-31 дні (днів) |
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| MTI200WX75GD-SMD |
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Виробник: IXYS
Description: MOSFET 6N-CH 75V 255A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
Description: MOSFET 6N-CH 75V 255A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
на замовлення 819 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 2630.36 грн |