Технічний опис MTM131270BBF Panasonic
Description: MOSFET P-CH 20V 2A MINI3-G3-B, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 4V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 1mA, Supplier Device Package: MINI3-G3-B, Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V.
Інші пропозиції MTM131270BBF
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MTM131270BBF | Виробник : Panasonic Electronic Components |
Description: MOSFET P-CH 20V 2A MINI3-G3-B Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 4V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 1mA Supplier Device Package: MINI3-G3-B Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
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