Технічний опис MTP50P03HDL ONSEMI
Description: MOSFET P-CH 30V 50A TO220AB, Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 125W (Tc).
Інші пропозиції MTP50P03HDL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| MTP50P03HDL | On Semiconductor |
 (P-CH,30V,50A,RDS-0.025,TO220) Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
MTP50P03HDL | onsemi |
Description: MOSFET P-CH 30V 50A TO220AB Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 125W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MTP50P03HDL | onsemi |
MOSFET 30V 50A P-Channel |
товару немає в наявності |
В кошику од. на суму грн. |
| MTP50P03HDL |
|
Виробник: On Semiconductor
(P-CH,30V,50A,RDS-0.025,TO220) Транзистори
(P-CH,30V,50A,RDS-0.025,TO220) Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| MTP50P03HDL |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 50A TO220AB
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Description: MOSFET P-CH 30V 50A TO220AB
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 125W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| MTP50P03HDL |
|
Виробник: onsemi
MOSFET 30V 50A P-Channel
MOSFET 30V 50A P-Channel
товару немає в наявності
В кошику
од. на суму грн.