Технічний опис MUBW10-12A7 IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A, Application: motors, Pulsed collector current: 35A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: diode/transistor, Case: E2-Pack, Gate-emitter voltage: ±20V, Collector current: 25A, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Power dissipation: 180W, Technology: NPT, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MUBW10-12A7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MUBW10-12A7 | Виробник : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Application: motors Pulsed collector current: 35A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 25A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 180W Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
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| MUBW10-12A7 | Виробник : IXYS |
Description: IGBT MODULE 1200V 20A 105W E2 |
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| MUBW10-12A7 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Application: motors Pulsed collector current: 35A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E2-Pack Gate-emitter voltage: ±20V Collector current: 25A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 180W Technology: NPT Mechanical mounting: screw |
товар відсутній |