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MUBW50-12A8

MUBW50-12A8 IXYS


MUBW50-12A8-1547960.pdf Виробник: IXYS
Discrete Semiconductor Modules 50 Amps 1200V
на замовлення 5 шт:

термін постачання 21-30 дні (днів)
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Технічний опис MUBW50-12A8 IXYS

Description: IGBT MODULE 1200V 85A 350W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: E3, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 3.7 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.

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MUBW50-12A8 Виробник : IXYS MUBW50-12A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MUBW50-12A8 Виробник : IXYS MUBW50-12A8.pdf Description: IGBT MODULE 1200V 85A 350W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 3.7 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
MUBW50-12A8 Виробник : IXYS MUBW50-12A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
товар відсутній