MUBW50-12T8 IXYS
Виробник: IXYSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Power dissipation: 270W
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис MUBW50-12T8 IXYS
Description: IGBT MODULE 1200V 80A 270W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: E3, IGBT Type: Trench, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 270 W, Current - Collector Cutoff (Max): 2.7 mA, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V.
Інші пропозиції MUBW50-12T8
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MUBW50-12T8 | Виробник : IXYS |
Description: IGBT MODULE 1200V 80A 270W E3 Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: E3 IGBT Type: Trench Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 270 W Current - Collector Cutoff (Max): 2.7 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
товар відсутній |
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MUBW50-12T8 | Виробник : IXYS |
Discrete Semiconductor Modules 50 Amps 1200V |
товар відсутній |
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| MUBW50-12T8 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: E3-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Power dissipation: 270W Mechanical mounting: screw |
товар відсутній |