MUH1PBHM3/89A Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO219AD
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 3.96 грн |
| 9000+ | 3.39 грн |
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Технічний опис MUH1PBHM3/89A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO219AD, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-219AD (MicroSMP), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 40 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AD, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V.
Інші пропозиції MUH1PBHM3/89A за ціною від 4.19 грн до 20.78 грн
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MUH1PBHM3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO219AD Packaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 11592 шт: термін постачання 21-31 дні (днів) |
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MUH1PBHM3/89A | Vishay General Semiconductor |
Rectifiers 1A,100V,25NS,UF Rect Micro SMP |
на замовлення 10606 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| MUH1PBHM3/89A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
на замовлення 11592 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.78 грн |
| 23+ | 13.42 грн |
| 100+ | 9.10 грн |
| 500+ | 6.34 грн |
| 1000+ | 4.63 грн |
| 2000+ | 4.19 грн |
| MUH1PBHM3/89A |
|
Виробник: Vishay General Semiconductor
Rectifiers 1A,100V,25NS,UF Rect Micro SMP
Rectifiers 1A,100V,25NS,UF Rect Micro SMP
на замовлення 10606 шт:
термін постачання 21-30 дні (днів)