MUN5211DW1T1
Виробник:
на замовлення 597000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис MUN5211DW1T1
Description: TRANS 2NPN PREBIAS 0.25W SOT363, Power - Max: 250mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Cut Tape (CT), Supplier Device Package: SC-88/SC70-6/SOT-363, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA.
Інші пропозиції MUN5211DW1T1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MUN5211DW1T1 | onsemi |
Description: TRANS 2NPN PREBIAS 0.25W SOT363 Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SC-88/SC70-6/SOT-363 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MUN5211DW1T1 | onsemi |
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual |
товару немає в наявності |
В кошику од. на суму грн. |
| MUN5211DW1T1 |
|
Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
товару немає в наявності
В кошику
од. на суму грн.
| MUN5211DW1T1 |
|
Виробник: onsemi
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual
товару немає в наявності
В кошику
од. на суму грн.