Технічний опис MUR160A A0G Taiwan Semiconductor
Description: DIODE GEN PURP 600V 1A DO204AL, Packaging: Tape & Box (TB), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 27pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Інші пропозиції MUR160A A0G
| Фото | Назва | Виробник | Інформація |
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MUR160A A0G | Виробник : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 600V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 27pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
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MUR160A A0G | Виробник : Taiwan Semiconductor |
Rectifiers 50ns, 1A, 600V, High Efficient Recovery Rectifier |
товару немає в наявності |