Технічний опис MUR2X030A02 GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 30A SOT-227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A, Current - Reverse Leakage @ Vr: 25 µA @ 200 V. 
Інші пропозиції MUR2X030A02
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | 
|---|---|---|---|---|---|
|   | MUR2X030A02 | Виробник : GeneSiC Semiconductor |  Description: DIODE MODULE GP 200V 30A SOT-227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V | товару немає в наявності | |
|   | MUR2X030A02 | Виробник : GeneSiC Semiconductor |  Diode Modules 200V 60A Fwd Super Fast Recovery | товару немає в наявності |